Wavelength dependence of laser-induced excitation dynamics in silicon

Abstract Effect of laser wavelength on the carrier-phonon dynamics and damage threshold silicon is studied numerically. Laser excitation in using Three-Temperature Model (3TM). We consider evolution electron, hole, lattice temperatures separately including band-gap re-normalization effect optical properties silicon. Finite Difference Time Domain method used to model field. Damage calculated 3TM reasonable agreement with experiments. Our results indicate that competition inter-band excitation, plasma heating, electron–phonon relaxation process defines for various wavelengths pulse durations.